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0561462 - FZÚ 2023 RIV GB eng J - Journal Article
Buryi, Maksym - Babin, Vladimir - Hubáček, Tomáš - Jarý, Vítězslav - Hájek, František - Kuldová, Karla - Artemenko, Anna - Hospodková, Alice
The influence of Si on the properties of MOVPE grown GaN thin films: Optical and EPR study.
Radiation Measurements. Roč. 157, Sep (2022), č. článku 106842. ISSN 1350-4487. E-ISSN 1879-0925
R&D Projects: GA ČR(CZ) GJ20-05497Y
Research Infrastructure: CzechNanoLab - 90110
Institutional support: RVO:68378271
Keywords : GaN * thin films * Si doping * luminescence * EPR
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 2, year: 2022
Method of publishing: Limited access
https://doi.org/10.1016/j.radmeas.2022.106842
Permanent Link: https://hdl.handle.net/11104/0334173