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0558906 - FZÚ 2023 RIV NL eng J - Journal Article
Vaněk, Tomáš - Jarý, Vítězslav - Hubáček, Tomáš - Hájek, František - Kuldová, Karla - Gedeonová, Zuzana - Babin, Vladimir - Remeš, Zdeněk - Buryi, Maksym
Acceleration of the yellow band luminescence in GaN layers via Si and Ge doping.
Journal of Alloys and Compounds. Roč. 914, Sep (2022), č. článku 165255. ISSN 0925-8388. E-ISSN 1873-4669
R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA ČR(CZ) GJ20-05497Y
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : semiconductors * nitride materials * vapor deposition * optical properties * luminescence
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 6.2, year: 2022
Method of publishing: Limited access
https://doi.org/10.1016/j.jallcom.2022.165255
Permanent Link: https://hdl.handle.net/11104/0332401