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0557316 - FZÚ 2023 RIV CH eng J - Journal Article
Hazdra, P. - Laposa, A. - Šobáň, Zbyněk - Taylor, Andrew - Lambert, Nicolas - Povolný, V. - Kroutil, J. - Gedeonová, Zuzana - Hubík, Pavel - Mortet, Vincent
Pseudo-vertical Mo/Au Schottky diodes on {113} oriented boron doped homoepitaxial diamond layers.
Diamond and Related Materials. Roč. 126, June (2022), č. článku 109088. ISSN 0925-9635. E-ISSN 1879-0062
R&D Projects: GA ČR(CZ) GA20-11140S; GA MŠMT(CZ) EF16_019/0000760; GA MŠMT LM2018110
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : diamond * Schottky diodes * boron-doping * molybdenum
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 4.1, year: 2022
Method of publishing: Limited access
https://doi.org/10.1016/j.diamond.2022.109088
Permanent Link: http://hdl.handle.net/11104/0331353