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0542805 - FZÚ 2022 RIV NL eng J - Journal Article
Vaněk, Tomáš - Hájek, František - Dominec, Filip - Hubáček, Tomáš - Kuldová, Karla - Pangrác, Jiří - Košutová, Tereza - Kejzlar, P. - Bábor, P. - Lachowski, A. - Hospodková, Alice
Luminescence redshift of thick InGaN/GaN heterostructures induced by the migration of surface adsorbed atoms.
Journal of Crystal Growth. Roč. 565, July (2021), č. článku 126151. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA MŠMT LM2018110; GA TA ČR(CZ) FW03010298
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : characterization * growth models * MOVPE * nitrides * scintillators
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.830, year: 2021
Method of publishing: Open access with time embargo
Permanent Link: http://hdl.handle.net/11104/0320191