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0536301 - FZÚ 2021 RIV DE eng J - Journal Article
Holovský, Jakub - De Nicolás, S.M. - De Wolf, S. - Ballif, C.
Amorphous/crystalline silicon interface stability: correlation between infrared spectroscopy and electronic passivation properties.
Advanced Materials Interfaces. Roč. 7, č. 20 (2020), s. 1-7, č. článku 2000957. ISSN 2196-7350. E-ISSN 2196-7350
R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA ČR GA18-24268S
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : amorphous silicon * silicon heterojunction * solar cells * passivation * FTIR
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 6.147, year: 2020
Method of publishing: Limited access
https://doi.org/10.1002/admi.202000957
Permanent Link: http://hdl.handle.net/11104/0314095