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0509391 - FZÚ 2020 RIV US eng J - Journal Article
Honolka, Jan - Hogan, C. - Vondráček, Martin - Polyak, Yaroslav - Arciprete, F. - Placidi, E.
Electronic properties of GaAsBi(001) alloys at low Bi content.
Physical Review Materials. Roč. 3, Apr (2019), s. 1-14, č. článku 044601. ISSN 2475-9953. E-ISSN 2475-9953
R&D Projects: GA MŠMT EF16_013/0001406; GA MŠMT(CZ) LO1409; GA MŠMT(CZ) LM2015088
Grant - others:OP VVV - SAFMAT(XE) CZ.02.1.01/0.0/0.0/16_013/0001406
Institutional support: RVO:68378271
Keywords : ARPES * GaAsBi * DFT * photoemission spectroscopy
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.337, year: 2019
Method of publishing: Limited access
https://doi.org/10.1103/physrevmaterials.3.044601
Permanent Link: http://hdl.handle.net/11104/0300167