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  1. 1.
    0509391 - FZÚ 2020 RIV US eng J - Journal Article
    Honolka, Jan - Hogan, C. - Vondráček, Martin - Polyak, Yaroslav - Arciprete, F. - Placidi, E.
    Electronic properties of GaAsBi(001) alloys at low Bi content.
    Physical Review Materials. Roč. 3, Apr (2019), s. 1-14, č. článku 044601. ISSN 2475-9953. E-ISSN 2475-9953
    R&D Projects: GA MŠMT EF16_013/0001406; GA MŠMT(CZ) LO1409; GA MŠMT(CZ) LM2015088
    Grant - others:OP VVV - SAFMAT(XE) CZ.02.1.01/0.0/0.0/16_013/0001406
    Institutional support: RVO:68378271
    Keywords : ARPES * GaAsBi * DFT * photoemission spectroscopy
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Impact factor: 3.337, year: 2019
    Method of publishing: Limited access
    https://doi.org/10.1103/physrevmaterials.3.044601
    Permanent Link: http://hdl.handle.net/11104/0300167
     
     

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