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0499514 - FZÚ 2019 RIV UA eng J - Journal Article
Savchenko, Dariia - Kalabukhova, E.N. - Shanina, B.D. - Bagraev, N.T. - Klyachkin, L.E. - Malyarenko, A.M. - Khromov, V. S.
Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments.
Semiconductor Physics Quantum Electronics & Optoelectronics. Roč. 21, č. 3 (2018), s. 249-255. ISSN 1560-8034. E-ISSN 1605-6582
R&D Projects: GA MŠMT(CZ) LO1409; GA MŠMT(CZ) LM2015088
Institutional support: RVO:68378271
Keywords : cyclotron resonance * EPR * effective mass * relaxation time * silicon nanostructure
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: http://hdl.handle.net/11104/0291703