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0492160 - FZÚ 2019 RIV DE eng J - Journal Article
Hospodková, Alice - Hubáček, Tomáš - Oswald, Jiří - Pangrác, Jiří - Kuldová, Karla - Hývl, Matěj - Dominec, Filip - Ledoux, G. - Dujardin, C.
InGaN/GaN structures: effect of the quantum well number on the cathodoluminescent properties.
Physica Status Solidi B. Roč. 255, č. 5 (2018), s. 1-5, č. článku 1700464. ISSN 0370-1972. E-ISSN 1521-3951
R&D Projects: GA MŠMT LM2015087; GA ČR GA16-11769S; GA MŠMT(CZ) LO1603
EU Projects: European Commission(XE) 690599 - ASCIMAT
Institutional support: RVO:68378271
Keywords : MOVPE * nitrides * scintillator * quantum well * cathodoluminescence
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.454, year: 2018
Permanent Link: http://hdl.handle.net/11104/0285718