0485338 - FZÚ 2018 RIV SK eng C - Conference Paper (international conference)
Hulicius, Eduard - Gregušová, D. - Hospodková, Alice - Pangrác, Jiří - Stoklas, R. - Pohorelec, O. - Novák, J. - Heuken, M.Preparation and measurement of GaN based HEMT structures.
Extended Abstract Book of international conference Progress in Applied Surface - SURFINT-SREN V. Bratislava: Comenius University, 2017 - (Pinčík, E.), s. 56-57. ISBN 978-80-2234411-1.
[Progress in Applied Surface, Interface and Thin Film Science 2017. Florence (IT), 20.11.2017-23.11.2017]
R&D Projects: GA MŠMT(CZ) LO1603; GA ČR GA16-11769S
Grant - others:AV ČR(CZ) SAV-16-21
Program: Bilaterální spolupráce
Institutional support: RVO:68378271
Keywords : GaN * AlGaN * heterostructure * HEMT * MOVPE
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: http://hdl.handle.net/11104/0280404
