0471134 - FZÚ 2017 RIV US eng C - Conference Paper (international conference)
Volodin, V.A. - Krivyakin, G.K. - Shklyaev, A.A. - Kochubei, S.A. - Kamaev, G.N. - Dvurechendkii, A.V. - Purkrt, Adam - Remeš, Zdeněk - Fajgar, Radek - Stuchlíková, The-Ha - Stuchlík, JiříHydrogenated amorphous silicon based p-i-n structures with Si and Ge nanocrystals in i-layers.
International Conference on Micro- and Nanoelectronics - 2016. ICMNE 2016. Bellingham: SPIE, 2016 - (Neuenschwander, B.; Roth, S.; Grigoropoulos, C.; Makimura, T.), s. 1-12, č. článku 102240D. Proceedings of SPIE, 9735. ISBN 978-151060949-5. ISSN 0277-786X.
[International Conference on Micro- and Nanoelectronics 2016. ICMNE 2016. Zvenigorod (RU), 03.10.2016-07.10.2016]
R&D Projects: GA ČR GA13-12386S; GA ČR GA13-31783S
Grant - others:AV ČR(CZ) KONNECT-007
Program: Bilaterální spolupráce
Institutional support: RVO:68378271 ; RVO:67985858
Keywords : nanocrystals * amorphous silicon * electroluminescence * electron microscopy * germanium
OECD category: Particles and field physics
Permanent Link: http://hdl.handle.net/11104/0268586
