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0431319 - FZÚ 2015 RIV NL eng J - Journal Article
Dimitrakopulos, G.P. - Bazioti, C. - Grym, Jan - Gladkov, Petar - Hulicius, Eduard - Pangrác, Jiří - Pacherová, Oliva - Komninou, Ph.
Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates.
Applied Surface Science. Roč. 306, Jul (2014), s. 89-93. ISSN 0169-4332. E-ISSN 1873-5584
R&D Projects: GA MŠMT 7AMB12GR034
Institutional support: RVO:68378271 ; RVO:67985882
Keywords : compound semiconductors * InGaAs * porous substrate * misfit dislocations * strain
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 2.711, year: 2014
Permanent Link: http://hdl.handle.net/11104/0235904