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0392283 - FZÚ 2014 RIV NL eng J - Journal Article
Hospodková, Alice - Zíková, Markéta - Pangrác, Jiří - Oswald, Jiří - Kuldová, Karla - Vyskočil, Jan - Hulicius, Eduard
Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots.
Journal of Crystal Growth. Roč. 370, MAY (2013), s. 303-306. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA ČR GAP102/10/1201
Institutional research plan: CEZ:AV0Z10100521
Keywords : band alignment * photoluminescence * strain reducing layer * quantum dot * MOVPE * InAs/GaAs
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.693, year: 2013
Permanent Link: http://hdl.handle.net/11104/0221191