Basket

0384869 - FZÚ 2013 RIV US eng J - Journal Article
Klenovský, P. - Brehm, M. - Křápek, Vlastimil - Lausecker, E. - Munzar, D. - Hackl, F. - Steiner, H. - Fromherz, T. - Bauer, G. - Humlíček, J.
Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition.
Physical Review. B. Roč. 86, č. 11 (2012), "115305-1"-"115305-8". ISSN 1098-0121
Institutional research plan: CEZ:AV0Z10100521
Keywords : semiconductors nanocrystals * cyclotron resonance * uniaxial-stress * band alignment * Ge islands * germanium * wells * silicon * Si(001) * luminescence
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 3.767, year: 2012
http://prb.aps.org/abstract/PRB/v86/i11/e115305
Permanent Link: http://hdl.handle.net/11104/0214353