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    1.
    0105962 - URE-Y 20040122 RIV US eng C - Conference Paper (international conference)
    Nohavica, Dušan - Gladkov, Petar - Žďánský, Karel
    Preparation and properties of GaInP2/GaAs heterostructures.
    [Příprava a vlastnosti heterostruktur GaInP2/GaAs.]
    ASDAM'2004. Proceedings of the Fifth International Conference on Advanced Semiconductor Devices and Microsystems. Piscataway: IEEE, 2004 - (Osvald, J.; Haščík, Š.), s. 57-60. ISBN 0-7803-8535-7.
    [Advanced Semiconductor Devices and Microsystems - ASDAM'04 /5./. Smolenice (SK), 17.10.2004-21.10.2004]
    R&D Projects: GA MŠMT ME 610
    Institutional research plan: CEZ:AV0Z2067918
    Keywords : semiconductors * photoluminescence * electric properties
    Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
    Permanent Link: http://hdl.handle.net/11104/0013147
     
    2.
    0379859 - FZÚ 2013 RIV NL eng J - Journal Article
    Kamada, K. - Yanagida, T. - Endo, T. - Tsutumi, K. - Usuki, Y. - Nikl, Martin - Fujimoto, Y. - Fukabori, A. - Yoshikawa, A.
    2 inch diameter single crystal growth and scintillation properties of Ce:Gd3Al2Ga3O12.
    Journal of Crystal Growth. Roč. 352, č. 1 (2012), s. 88-90. ISSN 0022-0248. E-ISSN 1873-5002
    Grant - others:AV ČR(CZ) M100100910
    Institutional research plan: CEZ:AV0Z10100521
    Keywords : Czochralski method * oxides * scintillator materials
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 1.552, year: 2012 ; AIS: 0.454, rok: 2012
    DOI: https://doi.org/10.1016/j.jcrysgro.2011.11.085
    Permanent Link: http://hdl.handle.net/11104/0210724
     

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