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0371379 - FZÚ 2012 RIV NL eng J - Journal Article
Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Hazdra, P. - Kuldová, Karla - Vyskočil, Jan - Hulicius, Eduard
Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures.
Journal of Crystal Growth. Roč. 315, č. 1 (2011), 110-113. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA ČR GAP102/10/1201; GA MŠMT LC510; GA ČR GA202/09/0676
Institutional research plan: CEZ:AV0Z10100521
Keywords : low dimensional structures * photoluminescence * electroluminescence * low-pressure MOVPE * InAs/GaAs quantum dots * semiconducting III–V materials
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.726, year: 2011
Permanent Link: http://hdl.handle.net/11104/0204912