0320707 - FZÚ 2009 RIV US eng C - Conference Paper (international conference)
Kindl, Dobroslav - Hubík, Pavel - Mareš, Jiří J. - Krištofik, JozefInterpretation of the DLTS spectra of silicon p-n junctions prepared by diffusion technique.
[Interpretace DLTS spekter p-n přechodů v křemíku připravených difúzní technologií.]
ASDAM 2008. Piscataway, N.J: IEEE Operation Center, 2008 - (Haščík, Š.; Osvald, J.), 155 - 158. ISBN 978-1-4244-2325-5.
[International Conference on Advanced Semiconductor Devices and Microsystems /7./. Smolenice Castle (SK), 12.10.2008-16.10.2008]
R&D Projects: GA ČR GA202/07/0525
Institutional research plan: CEZ:AV0Z10100521
Keywords : silicon * p-n junction * deep levels * DLTS
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0169500
