Basket

0303821 - URE-Y 20010079 IT eng A - Abstract
Procházková, Olga - Zavadil, Jiří - Žďánský, Karel - Grym, Jan
Preparation of InP-based semiconductor materials with low density of defects: effect of Nd, Tb and Yb addition.
[Parma]: [Instituto CNRMASPEC], 2001. DRIP IX - 9th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors. Program and abstracts. s. 37
[DRIP /9./. 24.09.2001-28.09.2001, Rimini]
R&D Projects: GA ČR GA102/99/0341
Institutional research plan: CEZ:AV0Z2067918
Keywords : liquid phase epitaxial growth * rare earth metals * semiconductor materials
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0114005