0104217 - FZU-D 20040559 RIV US eng C - Conference Paper (international conference)
Kindl, Dobroslav - Hubík, Pavel - Krištofik, Jozef - Mareš, Jiří J. - Hulicius, Eduard - Pangrác, Jiří - Melichar, Karel - Jurka, Vlastimil - Výborný, Zdeněk - Toušková, J.Growth-rate induced defects in GaSb.
[Defekty v GaSb vyvolané rychlostí růstu.]
ASDAM 2004. Piscataway, N.J.: IEEE Operation Center, 2004 - (Osvald, J.; Haščík, Š.), s. 259-262. ISBN 0-7803-8535-7.
[International Conference on Advanced Semiconductor Devices and Microsystems /5./. Smolenice Castle (SK), 17.10.2004-21.10.2004]
R&D Projects: GA AV ČR KSK1010104; GA ČR GA202/03/0410; GA AV ČR IAA1010404
Institutional research plan: CEZ:AV0Z1010914; CEZ:MSM 113200002
Keywords : GaSb * metalorganic vapour phase epitaxy * deep leveltransient spectroscopy
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0011494
