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0100007 - UPT-D 20040007 RIV US eng J - Journal Article
El Gomati, M. M. - Wells, T. C. R. - Müllerová, Ilona - Frank, Luděk - Jayakody, H.
Why is it That Differently Doped Regions in Semiconductors are Visible in Low Voltage SEM?
[Proč jsou různě dopované oblasti v polovodiči viditelné v nízko-napěťovém REM?]
IEEE Transactions on Electron Devices. Roč. 51, č. 2 (2004), s. 288-292. ISSN 0018-9383. E-ISSN 1557-9646
R&D Projects: GA AV ČR IAA1065304
Keywords : doping of semiconductors * SEM imaging * inspection of patterns
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 2.036, year: 2004
Permanent Link: http://hdl.handle.net/11104/0007514