0079153 - FZÚ 2007 RIV CA eng C - Conference Paper (international conference)
Hulicius, Eduard - Hospodková, Alice - Oswald, Jiří - Pangrác, Jiří - Kuldová, Karla - Mates, Tomáš - Melichar, Karel - Šimeček, Tomislav
Influence of MOVPE technological parameters on InAs/GaAs quantum dots properties.
[Vliv technologických parametrů MOVPE na vlastnosti InAs/GaAs kvantových teček.]
International Symposium on CompoundSemiconductors /33./. Vancouver: UBC, 2006 - (Harris, J.), s. 170-170
[International Symposium on Compound Semiconductors /33./. Vancouver (CA), 13.08.2006-17.08.2006]
Institutional research plan: CEZ:AV0Z10100521
Keywords : MOVPE * quantum dot * GaAs * InAs
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0003907