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0030680 - ÚFE 2006 RIV CZ eng C - Conference Paper (international conference)
Nohavica, Dušan - Gladkov, Petar - Jarchovský, Zdeněk
Asymmetric CO pores etching in A³ B⁵ semiconductors.
[Asymetrie krystalografických pórů v polovodičích A³ B⁵]
NANO´05. Brno: Brno University of Technology, Faculty of Mechanical Engineering, 2005 - (Šandera, P.), s. 100-105. ISBN 80-214-3085-0.
[NANO '05 - NANEMAT. Brno (CZ), 08.11.2005-10.11.2005]
R&D Projects: GA MŠMT(CZ) ME 697
Institutional research plan: CEZ:AV0Z20670512
Keywords : III-V semiconductors * porous semiconductors * indium compounds
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0120391