Výsledky vyhledávání
- 1.0540876 - FZÚ 2021 RIV FR eng A - Abstrakt
Vetushka, Aliaksi - Müller, Martin - Hladík, Martin - Ledinský, Martin - Fejfar, Antonín - Macháček, Jan - Baše, Tomáš
Study of the adsorption mechanisms of oriented dipoles of carborane-thiol molecules on a flat gold surface.
9th International Conference on Molecular Electronics. Paris: PalmSens, 2018. „T6-4“-„T6-4“.
[International Conference on Molecular Electronics (ElecMol) /9./. 17.12.2018-20.12.2018, Paris]
Grant CEP: GA MŠMT LM2015087; GA TA ČR TH02020628; GA ČR(CZ) GJ17-27338Y
Institucionální podpora: RVO:68378271 ; RVO:61388980
Klíčová slova: WF * SAMs
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.); Inorganic and nuclear chemistry (UACH-T)
Trvalý link: http://hdl.handle.net/11104/0318475 - 2.0501495 - FZÚ 2019 JP eng A - Abstrakt
Hospodková, Alice - Dominec, Filip - Hubáček, Tomáš - Zíková, Markéta - Pangrác, Jiří - Oswald, Jiří - Kuldová, Karla - Vetushka, Aliaksi - Hulicius, Eduard
Suppressed contamination of InGaN/GaN MQW region by growing the buffer layer at lower temperature.
ICMOVPE XIX - Technical Digest. Nara: Japanese Association for Crystal Growth, 2018 - (Miyake, H.). s. 147-147
[19th International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE XIX. 03.06.2018-08.06.2018, Nara]
Grant CEP: GA MŠMT(CZ) LO1603; GA ČR GA16-15569S
GRANT EU: European Commission(XE) 690599 - ASCIMAT
Institucionální podpora: RVO:68378271
Klíčová slova: GaN buffer layer * scintillators * low dimensional structures * V-pits * metalorganic vapor phase epitaxy * InGaN/GaN QWs
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0293517 - 3.0496184 - FZÚ 2019 RIV PL eng A - Abstrakt
Vaněk, Tomáš - Hospodková, Alice - Hubáček, Tomáš - Kuldová, Karla - Oswald, Jiří - Pangrác, Jiří - Dominec, Filip - Zíková, Markéta - Vetushka, Aliaksi
Increasing scintillator active region thickness by InGaN/GaN QW number.
Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018. s. 151-151.
[International Symposium on Growth of III-Nitrides ISGN-7. 05.08.2018-10.08.2018, Warsaw]
Grant CEP: GA MŠMT(CZ) LO1603; GA ČR GA16-15569S
Institucionální podpora: RVO:68378271
Klíčová slova: InGaN/GaN * QW number
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0289013 - 4.0480627 - FZÚ 2018 eng A - Abstrakt
Hájková, Zdeňka - Ledinský, Martin - Vetushka, Aliaksi - Stuchlík, Jiří - Müller, Martin - Pikna, Peter - Bouša, Milan - Kalbáč, Martin - Frank, Otakar - Fejfar, Antonín
Graphene on microcrystalline silicon: Local photovoltaic characterization of a Schottky junction solar cell.
NANOCON 2016. List of Abstracts. Ostrava: Tanger Ltd., 2016 - (Shrbená, J.). s. 37-37. ISBN 978-80-87294-68-0.
[NANOCON 2016. International Conference /8./. 19.10.2016-21.10.2016, Brno]
Grant CEP: GA ČR GA14-15357S
Institucionální podpora: RVO:68378271 ; RVO:61388955
Klíčová slova: graphene * microcrystalline silicon * Schottky junction * photovoltaics * C-AFM
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0276363 - 5.0479964 - FZÚ 2018 eng A - Abstrakt
Ledinský, Martin - Hájková, Zdeňka - Vetushka, Aliaksi - Tomasi, A. - Paviet-Salomon, B. - Despeisse, M. - Řáhová, Jaroslava - Frank, O. - De Wolf, S. - Ballif, C. - Fejfar, Antonín
Profilometry with sub-nanometre precision by Raman spectroscopy.
NANOCON 2016. List of Abstracts. Ostrava: Tanger Ltd., 2016 - (Shrbená, J.). s. 56-56. ISBN 978-80-87294-68-0.
[NANOCON 2016. International Conference /8./. 19.10.2016-21.10.2016, Brno]
Grant CEP: GA ČR GA14-15357S
Institucionální podpora: RVO:68378271 ; RVO:61388955
Klíčová slova: Raman spectroscopy * amorphous silicon thin film * back-contacted heterojunction solar cells * graphene * 2D multilayer materials
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0276010 - 6.0391055 - FZÚ 2013 HU eng A - Abstrakt
Hulicius, Eduard - Hospodková, Alice - Pangrác, Jiří - Vyskočil, Jan - Oswald, Jiří - Vetushka, Aliaksi
Controlling of properties of MOVPE InAs/GaAs quantum dot structures for device application.
EuroNanoForum 2011 in partnership with Nanotech Europe - Coference - Exhibition - Matchmaking. 2011.
[EuroNanoForum 2011. 30. 05.2011-01.06. 2011, Budapest]
Grant CEP: GA ČR GAP102/10/1201; GA MŠMT LC510
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: InAs/GaAs * Quantum Dots
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Trvalý link: http://hdl.handle.net/11104/0219937 - 7.0391003 - FZÚ 2013 DE eng A - Abstrakt
Rezek, Bohuslav - Babchenko, Oleg - Vetushka, Aliaksi - Ledinský, Martin - Kromka, Alexander
Growth and surface conductivity of diamond in-plane nanowires.
Proceedings of the 22nd European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes and Nitrides. Munich, 2011. ISBN N.
[European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes and Nitrides /22./. 04.09.2011-08.09.2011, Garmisch-Partenkirchen]
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: nanocrystalline diamond * nanowires * surface conductivity * selective area deposition
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Trvalý link: http://hdl.handle.net/11104/0219830 - 8.0390947 - FZÚ 2013 JP eng A - Abstrakt
Ledinský, Martin - Vetushka, Aliaksi - Stuchlík, Jiří - Rezek, Bohuslav - Fejfar, Antonín - Kočka, Jan
Microcrystalline silicon thin films studied by photoconductive atomic force microscopy.
ICANS 24. Program and Abstracts Book. Nara, 2011. s. 233-233.
[International Conference on Amorphous and Nanocrystalline Semiconductors /24./ - ICANS 24. 21.08.2011-26.08.2011, Nara]
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: amorphous silicon * nanocrystalline silicon * thin films * atomic force microscopy * photoconductivity
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Trvalý link: http://hdl.handle.net/11104/0219806 - 9.0390938 - FZÚ 2013 eng A - Abstrakt
Vetushka, Aliaksi - Fejfar, Antonín - Ledinský, Martin - Rezek, Bohuslav - Kočka, Jan
Conductive atomic force microscopy of delicate nanostructures in torsional resonance mode.
International Workshop on Scanning Probe Microscopy for Energy Applications /2./, Program and Abstracts. 2011.
[International Workshop on Scanning Probe Microscopy for Energy Applications /2./. 08.06.2011-10. 06. 2011, Mainz]
Grant CEP: GA MŠMT(CZ) LC06040; GA MŠMT(CZ) MEB061012; GA AV ČR KAN400100701; GA MŠMT LC510
GRANT EU: European Commission(XE) 240826 - PolySiMode
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: C-AFM * nanowires * TR-mode * TR-TUNA
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Trvalý link: http://hdl.handle.net/11104/0219866 - 10.0390897 - FZÚ 2013 US eng A - Abstrakt
Pikna, Peter - Fejfar, Antonín - Ledinský, Martin - Vetushka, Aliaksi - Kočka, Jan - Benda, V.
In Situ Measuring System Designed for Improvement of Poly-Si Thin Film Solar Cells.
The Fourth International Forum on Multidisciplinary Education and Research for Energy Science. Honolulu, 2011.
[The Fourth International Forum on Multidisciplinary Education and Research for Energy Science. 17.12.2011-21.12. 2011, Honolulu, Hawaii]
Grant CEP: GA MŠMT(CZ) LC06040; GA AV ČR KAN400100701; GA MŠMT LC510
GRANT EU: European Commission(XE) 240826 - PolySiMode
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: polycrystalline silicon * thin film solar cells * water vapor passivation
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Trvalý link: http://hdl.handle.net/11104/0219767