Dynamic Stability of Ni FCC Crystal under Isotropic Tension
p.47
p.47
Structural Transformation in Nanowires CuAu I with Superstructure of L10 of Tetragonal Symmetry at Uni-Axial Tension Deformation
p.51
p.51
Structural Response of Metal Crystallite with BCC Lattice on Atomic Level under Nanoindentation
p.55
p.55
Comparison between Pile-Up Singularities and Stress Fields Induced by Thin Slip Bands. Application to the Prediction of Grain Boundary Microcrack Nucleation
p.61
p.61
Planar Defects and Dislocations in C40 and FCC Lattices
p.67
p.67
Thermally Activated Dislocation Motion in an AS21 Alloy and Alloy Reinforced with Short Ceramic Fibres Studied at Elevated Temperatures
p.71
p.71
Deformation and Fracture of a Magnesium Alloy at Elevated Temperatures
p.75
p.75
Thermodynamics of Dislocation Pattern Formation at the Mesoscale
p.79
p.79
Modeling and Experimental Study of Long Term Creep Damage in Austenitic Stainless Steels
p.83
p.83
Planar Defects and Dislocations in C40 and FCC Lattices
Abstract:
Atomic planes at three different positions ABC form the stacking along the <111> directions in the FCC lattice and similarly along the <0001> hexagonal axis in the C40 structure in transition metal silicides. However, the structures of silicides are constituted of several stacking of identical atomic planes at four different positions: AB in C11b structures of e.g. MoSi2, ABC in C40 structures of e.g. VSi2 and ABDC in C54 structures of e.g. TiSi2 disilicides. The occurrence of the fourth position essentially influences the properties of defects and consequently the mechanical properties of C40 materials.
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Info:
Periodical:
Key Engineering Materials (Volumes 592-593)
Pages:
67-70
Citation:
Online since:
November 2013
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