Alloying-driven transition between ferromagnetism and antiferromagnetism in UTGe compounds: UCo1xIrxGe

Dávid Hovančík, Akinari Koriki, Anežka Bendová, Petr Doležal, Petr Proschek, Martin Míšek, Marian Reiffers, Jan Prokleška, Jiří Pospíšil, and Vladimír Sechovský
Phys. Rev. B 105, 014436 – Published 27 January 2022
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Abstract

The evolution of magnetic properties of isostructural and isoelectronic solid solutions of the superconducting itinerant 5f-electron ferromagnet (FM) UCoGe with antiferromagnet (AFM) UIrGe was studied by magnetization, AC susceptibility, specific heat, and electrical resistivity measurements of a series of UCo1xIrxGe compounds in polycrystalline and single-crystalline form at various temperatures and magnetic fields. Both the weak FM and superconductivity in UCoGe were found to have vanished already for very low Ir substitution for Co (x=0.02). The AFM of UIrGe is gradually suppressed. This is documented by a rapid decrease in both Néel temperature and the critical field of the metamagnetic transition with decreasing Ir concentration, which both tend to vanish just above x=0.8. The section of the Tx phase diagram in the range 0.02x0.8 is dominated by a correlated paramagnetic phase (CPM) exhibiting very broad bumps in temperature dependencies of b-axis magnetization and specific heat developing with increasing x. For x0.24, wide peaks appear in the c-axis thermomagnetic curves due to AFM correlations which may eventually lead to frozen incoherent spin configurations at low temperatures. The CPM is also accompanied by specific electrical resistivity anomalies. The Tx phase diagram determined for the UCo1xIrxGe compounds contrasts with the behavior of the related URh1xIrxGe system, which was reported to exhibit an extended concentration range of stable FM in Rh-rich compounds and a discontinuous transformation between the FM and AFM phases at a critical Rh-Ir concentration. The striking difference is tentatively attributed to (a) the instability of tiny U moment in the weak itinerant FM UCoGe induced by substitutional disorder at already very low Ir doping, (b) the rather stable U moment in URhGe formed by much less delocalized 5f electrons assisted by weakly varying lattice parameters of URh1xIrxGe compounds.

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  • Received 18 June 2021
  • Revised 8 January 2022
  • Accepted 11 January 2022

DOI:https://doi.org/10.1103/PhysRevB.105.014436

©2022 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Dávid Hovančík1,2,*, Akinari Koriki1,3, Anežka Bendová1, Petr Doležal1, Petr Proschek1, Martin Míšek4, Marian Reiffers2, Jan Prokleška1, Jiří Pospíšil1, and Vladimír Sechovský1

  • 1Charles University, Faculty of Mathematics and Physics, Department of Condensed Matter Physics, Ke Karlovu 5, 121 16 Prague 2, Czech Republic
  • 2University of Presov, Faculty of Humanities and Natural Sciences, 17 Novembra 1, 081 16 Presov, Slovakia
  • 3Hokkaido University, Graduate School of Science, Department of Condensed Matter Physics, Kita10, Nishi 8, Kita-ku, Sapporo 060-0810, Japan
  • 4Institute of Physics, Academy of Sciences of Czech Republic, v.v.i, Na Slovance 2, 182 21 Prague 8, Czech Republic

  • *Corresponding author: hovancik@mag.mff.cuni.cz

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Issue

Vol. 105, Iss. 1 — 1 January 2022

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