Abstract
We present a SEE and TID effect study of the novel monolithic pixel detector, X-CHIP-03, manufactured in a 180 nm SOI technology. The SEU cross section of the custom D flip-flops in the X-CHIP-03 ASIC has been evaluated using accelerated ions with LET ranging from 0.45 to 69 MeV⋅cm2⋅mg−1. The global TID response of the X-CHIP-03 has been evaluated at a dose rate of 16.2 Gy⋅min−1. The direct I-V measurements of transistor properties were made under identical radiation conditions using the predecessor X-CHIP-02 ASIC manufactured in the same technology, which contains the transistor testing matrices for TID measurements.