Abstract
The presented study compares the effects of ionizing radiation on circuit structures manufactured in a 180 nm bulk CMOS and 180 nm SoI CMOS technology. A high-flux 60Co medical radiation source with a dose rate of 460 Gy⋅min−1 was used. The specimens under irradiation were placed in a Pb/Al enclosure providing an approximate electron equilibrium. Besides the analog and digital circuits, the ASICs also contain transistor test structures for direct study of irradiation effects upon electronics. The integral characteristics of current consumption, shifts in transistor threshold voltage and leakage current increase observations have been made. The SoI technology was shown to be several orders of magnitude more sensitive to TID effects, but during irradiation, its properties had a tendency to return to normal.