EPR Study of the Nitrogen Containing Defect Center Created in Self-Assembled 6H SiC Nanostructure

Ekaterina N. Kalabukhova; Dariya Savchenko; Bela Shanina; Nikolai T. Bagraev; Leonid Klyachkin; Anna Malyarenko

doi:10.4028/www.scientific.net/MSF.740-742.389

Paper Titles

Deep Levels in P-Type 4H-SiC Induced by Low-Energy Electron Irradiation
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Diffusion Study of Chlorine in SiC by First Principles Calculations
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Electron Paramagnetic Resonance Studies of Nb in 6H-SiC
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Kinetic Monte Carlo Simulation of Impurity Effects on Nucleation and Growth of SiC Clusters on Si(100)
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Lateral Boron Distribution in Polycrystalline SiC Source Materials
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Optical Characterization of Compensating Defects in Cubic SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742EPR Study of the Nitrogen Containing Defect Center...

EPR Study of the Nitrogen Containing Defect Center Created in Self-Assembled 6H SiC Nanostructure

Abstract:

Triplet center with spin state S = 1 is detected in the EPR spectrum of the self-assembled 6H SiC nanostructure obtained by non-equilibrium boron diffusion into the n-type 6H SiC epitaxial layer (EL) under conditions of the controlled injection of the silicon vacancies at the temperature of T = 900°C. From the analysis of the angular dependences of the EPR spectrum and the numerical diagonalization of the spin Hamiltonian, the value of the zero-field splitting constant D and g-factor are found to be D = 1140•10^-4см^-1 and g_par = 1.9700, g_per = 1.9964. Based on the hyperfine (hf) structure of the defect originating from the hf interaction with one ¹⁴N nuclei, the large value of the zero-field splitting constant D and technological conditions of the boron diffusion into the n-type 6H SiC EL, the triplet center is tentatively assigned to the defect center consisting of nitrogen atom and silicon vacancy.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

389-392

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.389

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Online since:

January 2013

Authors:

Ekaterina N. Kalabukhova, Dariya Savchenko, Bela Shanina, Nikolai T. Bagraev, Leonid Klyachkin, Anna Malyarenko

Keywords:

EPR, Self-Assembled 6H SiC Nanostructure, V_SiN_C Pair

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References

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