Analysis of GaSb and AlSb reconstructions on GaSb(111) $A$- and $B$-oriented surfaces by azimuthal-scan reflection high-energy electron diffraction

Analysis of GaSb and AlSb reconstructions on GaSb(111) $A$ - and $B$ -oriented surfaces by azimuthal-scan reflection high-energy electron diffraction

Andre Proessdorf, Frank Grosse, Wolfgang Braun, Ferhat Katmis, Henning Riechert, and Oleksandr Romanyuk

Phys. Rev. B 83, 155317 – Published 21 April 2011

Abstract

The symmetry and existence ranges of GaSb and AlSb (111) $A$ and $B$ surface reconstructions are investigated using azimuthal-scan reflection high-energy electron diffraction (ARHEED) in a molecular-beam-epitaxy (MBE) environment. ARHEED patterns of all reconstructions within the accessible MBE group V flux-substrate temperature parameter field are presented and analyzed. The transition borders are mapped out as a reference for future growth experiments. The experimental results are interpreted on the basis of general construction principles for (111) surfaces of III-V semiconductors. ARHEED allows the complete determination of the two-dimensional in-plane reciprocal lattice in a single, continuous measurement. This allows the unambiguous identification of the reconstructions on (111) surfaces where the intrinsic symmetry is masked by the 120 $^{°}$ domain structure and possible disorder.