Spin-Pumping-Induced Inverse Spin Hall Effect in Nb/Ni80Fe20 Bilayers and its Strong Decay Across the Superconducting Transition Temperature

Kun-Rok Jeon, Chiara Ciccarelli, Hidekazu Kurebayashi, Jöerg Wunderlich, Lesley F. Cohen, Sachio Komori, Jason W. A. Robinson, and Mark G. Blamire
Phys. Rev. Applied 10, 014029 – Published 27 July 2018
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Abstract

We quantify the spin Hall angle θSH and spin-diffusion length lsd of Nb from inverse spin Hall effect (ISHE) measurements in Nb/Ni80Fe20 bilayers under ferromagnetic resonance. By varying the Nb thickness tNb and comparing to a Ni80Fe20/Pt reference sample, room temperature values of θSH and lsd for Nb are estimated to be approximately −0.001 and 30 nm, respectively. We also investigate the ISHE as a function of temperature T for different tNb. Above the superconducting transition temperature Tc of Nb , a clear tNb-dependent T evolution of the ISHE is observed whereas below Tc, the ISHE voltage drops rapidly and is below the sensitivity of our measurement setup at a lower T. This suggests the strong decay of the quasiparticle (QP) charge-imbalance relaxation length across Tc, as supported by an additional investigation of the ISHE in a different sample geometry along with model calculation. Our finding suggests careful consideration should be made when developing superconductor spin Hall devices that intend to utilize QP-mediated spin-to-charge interconversion.

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  • Received 26 March 2018
  • Revised 28 May 2018

DOI:https://doi.org/10.1103/PhysRevApplied.10.014029

© 2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Kun-Rok Jeon1,2,*, Chiara Ciccarelli2, Hidekazu Kurebayashi3, Jöerg Wunderlich4,5, Lesley F. Cohen6, Sachio Komori1, Jason W. A. Robinson1, and Mark G. Blamire1

  • 1Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
  • 2Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom
  • 3London Centre for Nanotechnology and Department of Electronic and Electrical Engineering, University of College London, London WC1H 01H, United Kingdom
  • 4Hitachi Cambridge Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
  • 5Institute of Physics, ASCR, Cukrovarnicka 10, 162 00 Praha 6, Czech Republic
  • 6The Blackett Laboratory, Imperial College London, SW7 2AZ, United Kingdom

  • *jeonkunrok@gmail.com

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Issue

Vol. 10, Iss. 1 — July 2018

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