Počet záznamů: 1

Self-assembled InAs/GaAs quantum dots covered by different strain reducing layers exhibiting strong photo- and electroluminescence in 1.3 and 1.55 μm bands

SYSNO	0367915
Název	Self-assembled InAs/GaAs quantum dots covered by different strain reducing layers exhibiting strong photo- and electroluminescence in 1.3 and 1.55 μm bands
Tvůrce(i)	Hazdra, P. (CZ) Oswald, Jiří (FZU-D)_{RID, ORCID} Komarnitskyy, V. (CZ) Kuldová, Karla (FZU-D)_{RID, ORCID} Hospodková, Alice (FZU-D)_{RID, ORCID, SAI} Hulicius, Eduard (FZU-D)_{RID, ORCID, SAI} Pangrác, Jiří (FZU-D)_{RID, ORCID, SAI}
Zdroj.dok.	Journal of Nanoscience and Nanotechnology. Roč. 11, č. 8 (2011), s. 6804-6809. - : American Scientific Publishers
Druh dok.	Článek v odborném periodiku
Grant	GAP102/10/1201 GA ČR - Grantová agentura ČR
	GA202/09/0676 GA ČR - Grantová agentura ČR
CEZ	AV0Z10100521 - FZU-D (2005-2011)
Jazyk dok.	eng
Země vyd.	US
Klíč.slova	quantum dots * MOVPE * InAs * GaAs * photoluminescence * electroluminescence
Trvalý link	http://hdl.handle.net/11104/0202422

Počet záznamů: 1