Počet záznamů: 1  

The Key Role of Tin (Sn) in Microstructure and Mechanical Properties of Ti2SnC (M2AX) Thin Nanocrystalline Films and Powdered Polycrystalline Samples

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    SYSNO ASEP0552393
    Druh ASEPJ - Článek v odborném periodiku
    Zařazení RIVJ - Článek v odborném periodiku
    Poddruh JČlánek ve WOS
    NázevThe Key Role of Tin (Sn) in Microstructure and Mechanical Properties of Ti2SnC (M2AX) Thin Nanocrystalline Films and Powdered Polycrystalline Samples
    Tvůrce(i) Bakardjieva, Snejana (UACH-T) SAI, RID, ORCID
    Plocek, Jiří (UACH-T) RID, ORCID, SAI
    Ismagulov, Bauyrzhan (UACH-T)
    Kupčík, Jaroslav (UACH-T) SAI, RID, ORCID
    Vacík, Jiří (UJF-V) RID, ORCID, SAI
    Ceccio, Giovanni (UJF-V) ORCID, RID, SAI
    Lavrentiev, Vasyl (UJF-V) RID, ORCID, SAI
    Němeček, J. (CZ)
    Michna, Š. (CZ)
    Klie, R. (US)
    Celkový počet autorů10
    Číslo článku307
    Zdroj.dok.Nanomaterials. - : MDPI
    Roč. 12, č. 3 (2022)
    Poč.str.23 s.
    Jazyk dok.eng - angličtina
    Země vyd.CH - Švýcarsko
    Klíč. slovaM2AX ; Nanoindentation ; Powders ; STEM ; Thin films ; Ti2SnC
    Vědní obor RIVCA - Anorganická chemie
    Obor OECDInorganic and nuclear chemistry
    Vědní obor RIV – spolupráceÚstav jaderné fyziky - Průmyslová chemie a chemické inženýrství
    CEPGA18-21677S GA ČR - Grantová agentura ČR
    Způsob publikováníOpen access
    Institucionální podporaUACH-T - RVO:61388980 ; UJF-V - RVO:61389005
    UT WOS000756268200001
    EID SCOPUS85122967969
    DOI10.3390/nano12030307
    AnotaceLayered ternary Ti2SnC carbides have attracted significant attention because of their ad-vantage as a M2AX phase to bridge the gap between properties of metals and ceramics. In this study, Ti2SnC materials were synthesized by two different methods—an unconventional low-energy ion facility (LEIF) based on Ar+ ion beam sputtering of the Ti, Sn, and C targets and sintering of a com-pressed mixture consisting of Ti, Sn, and C elemental powders up to 1250 °C. The Ti2SnC nanocrys-talline thin films obtained by LEIF were irradiated by Ar+ ions with an energy of 30 keV to the fluence of 1.1015 cm−2 in order to examine their irradiation-induced resistivity. Quantitative structural analysis obtained by Cs-corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) confirmed transition from ternary Ti2SnC to binary Ti0.98C carbide due to irradiation-induced β-Sn surface segregation. The nanoindentation of Ti2SnC thin nanocrys-talline films and Ti2SnC polycrystalline powders shows that irradiation did not affect significantly their mechanical properties when concerning their hardness (H) and Young’s modulus (E) We high-lighted the importance of the HAADF-STEM techniques to track atomic pathways clarifying the behavior of Sn atoms at the proximity of irradiation-induced nanoscale defects in Ti2SnC thin films.
    PracovištěÚstav anorganické chemie
    KontaktJana Kroneislová, krone@iic.cas.cz, Tel.: 311 236 931
    Rok sběru2023
    Elektronická adresahttp://hdl.handle.net/11104/0327534
Počet záznamů: 1