Počet záznamů: 1
The Key Role of Tin (Sn) in Microstructure and Mechanical Properties of Ti2SnC (M2AX) Thin Nanocrystalline Films and Powdered Polycrystalline Samples
- 1.
SYSNO ASEP 0552393 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název The Key Role of Tin (Sn) in Microstructure and Mechanical Properties of Ti2SnC (M2AX) Thin Nanocrystalline Films and Powdered Polycrystalline Samples Tvůrce(i) Bakardjieva, Snejana (UACH-T) SAI, RID, ORCID
Plocek, Jiří (UACH-T) RID, ORCID, SAI
Ismagulov, Bauyrzhan (UACH-T)
Kupčík, Jaroslav (UACH-T) SAI, RID, ORCID
Vacík, Jiří (UJF-V) RID, ORCID, SAI
Ceccio, Giovanni (UJF-V) ORCID, RID, SAI
Lavrentiev, Vasyl (UJF-V) RID, ORCID, SAI
Němeček, J. (CZ)
Michna, Š. (CZ)
Klie, R. (US)Celkový počet autorů 10 Číslo článku 307 Zdroj.dok. Nanomaterials. - : MDPI
Roč. 12, č. 3 (2022)Poč.str. 23 s. Jazyk dok. eng - angličtina Země vyd. CH - Švýcarsko Klíč. slova M2AX ; Nanoindentation ; Powders ; STEM ; Thin films ; Ti2SnC Vědní obor RIV CA - Anorganická chemie Obor OECD Inorganic and nuclear chemistry Vědní obor RIV – spolupráce Ústav jaderné fyziky - Průmyslová chemie a chemické inženýrství CEP GA18-21677S GA ČR - Grantová agentura ČR Výzkumná infrastruktura CANAM II - 90056 - Ústav jaderné fyziky AV ČR, v. v. i. Způsob publikování Open access Institucionální podpora UACH-T - RVO:61388980 ; UJF-V - RVO:61389005 UT WOS 000756268200001 EID SCOPUS 85122967969 DOI 10.3390/nano12030307 Anotace Layered ternary Ti2SnC carbides have attracted significant attention because of their ad-vantage as a M2AX phase to bridge the gap between properties of metals and ceramics. In this study, Ti2SnC materials were synthesized by two different methods—an unconventional low-energy ion facility (LEIF) based on Ar+ ion beam sputtering of the Ti, Sn, and C targets and sintering of a com-pressed mixture consisting of Ti, Sn, and C elemental powders up to 1250 °C. The Ti2SnC nanocrys-talline thin films obtained by LEIF were irradiated by Ar+ ions with an energy of 30 keV to the fluence of 1.1015 cm−2 in order to examine their irradiation-induced resistivity. Quantitative structural analysis obtained by Cs-corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) confirmed transition from ternary Ti2SnC to binary Ti0.98C carbide due to irradiation-induced β-Sn surface segregation. The nanoindentation of Ti2SnC thin nanocrys-talline films and Ti2SnC polycrystalline powders shows that irradiation did not affect significantly their mechanical properties when concerning their hardness (H) and Young’s modulus (E) We high-lighted the importance of the HAADF-STEM techniques to track atomic pathways clarifying the behavior of Sn atoms at the proximity of irradiation-induced nanoscale defects in Ti2SnC thin films. Pracoviště Ústav anorganické chemie Kontakt Jana Kroneislová, krone@iic.cas.cz, Tel.: 311 236 931 Rok sběru 2023 Elektronická adresa http://hdl.handle.net/11104/0327534
Počet záznamů: 1