Počet záznamů: 1  

Fabrication of functional nanostructures in thin silicon nitride membranes

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    SYSNO ASEP0512151
    Druh ASEPA - Abstrakt
    Zařazení RIVZáznam nebyl označen do RIV
    Zařazení RIVNení vybrán druh dokumentu
    NázevFabrication of functional nanostructures in thin silicon nitride membranes
    Tvůrce(i) Matějka, Milan (UPT-D) RID, ORCID, SAI
    Chlumská, Jana (UPT-D) RID, ORCID, SAI
    Krátký, Stanislav (UPT-D) RID, ORCID, SAI
    Řiháček, Tomáš (UPT-D) RID, ORCID
    Knápek, Alexandr (UPT-D) RID, ORCID, SAI
    Kolařík, Vladimír (UPT-D) RID, ORCID, SAI
    Celkový počet autorů6
    Zdroj.dok.Fourth International Symposium on Dielectric Materials and Applications (ISyDMA 4). Book of Abstracts. - Amman : Jordan University of Science & Technology, 2019
    Poč.str.2 s.
    Forma vydáníTištěná - P
    AkceThe Fourth International Symposium on Dielectric Materials and Applications (ISyDMA 4)
    Datum konání02.05.2019 - 04.05.2019
    Místo konáníAmman
    ZeměJO - Jordánsko
    Typ akceWRD
    Jazyk dok.eng - angličtina
    Země vyd.JO - Jordánsko
    Klíč. slovathin dielectric layers ; silicon nitride ; membranes ; electron beam lithography
    Vědní obor RIVJA - Elektronika a optoelektronika, elektrotechnika
    Institucionální podporaUPT-D - RVO:68081731
    AnotaceThe silicon nitride (SiN) films are typically used in semiconductor industry as a masking or dielectric layer. SiN films are used also as a base material for membrane fabrication that can be used for microelectronic and micro optic devices (MEMS, MOMS) to modify electromagnetic radiation or charged particle beams distribution, phase or spectrum. While the basic procedure of fabrication membranes is well described, the micro- and nanopatterning of its surface brings new challenges and functionality.
    This paper presents a fabrication method of nano perforated SiN dielectric membrane in a silicon frame using ultra-high resolution electron-beam lithography (EBL) and reactive ion etching (RIE) technique. Silicon chips with freestanding membranes are obtained by standard silicon fabrication procedures. Preparation procedures for pattern transfer in the SiN layer through the metal and polymer etch mask are presented, involving advanced lithographic, deposition and etching techniques. Theoretical aspects are summarized including technological issues, achieved results and application potential of patterned silicon nitride membranes. The properties of experimentally fabricated charged particle optics device consisting of nano-patterned SiN membrane developed for electron vortex generation in a scanning transmission electron microscope (STEM) are described. Additional possibility of using these nanostructured membranes is also discussed.
    PracovištěÚstav přístrojové techniky
    KontaktMartina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178
    Rok sběru2020
Počet záznamů: 1