Počet záznamů: 1
Fabrication of functional nanostructures in thin silicon nitride membranes
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SYSNO ASEP 0512151 Druh ASEP A - Abstrakt Zařazení RIV Záznam nebyl označen do RIV Zařazení RIV Není vybrán druh dokumentu Název Fabrication of functional nanostructures in thin silicon nitride membranes Tvůrce(i) Matějka, Milan (UPT-D) RID, ORCID, SAI
Chlumská, Jana (UPT-D) RID, ORCID, SAI
Krátký, Stanislav (UPT-D) RID, ORCID, SAI
Řiháček, Tomáš (UPT-D) RID, ORCID
Knápek, Alexandr (UPT-D) RID, ORCID, SAI
Kolařík, Vladimír (UPT-D) RID, ORCID, SAICelkový počet autorů 6 Zdroj.dok. Fourth International Symposium on Dielectric Materials and Applications (ISyDMA 4). Book of Abstracts. - Amman : Jordan University of Science & Technology, 2019 Poč.str. 2 s. Forma vydání Tištěná - P Akce The Fourth International Symposium on Dielectric Materials and Applications (ISyDMA 4) Datum konání 02.05.2019 - 04.05.2019 Místo konání Amman Země JO - Jordánsko Typ akce WRD Jazyk dok. eng - angličtina Země vyd. JO - Jordánsko Klíč. slova thin dielectric layers ; silicon nitride ; membranes ; electron beam lithography Vědní obor RIV JA - Elektronika a optoelektronika, elektrotechnika Institucionální podpora UPT-D - RVO:68081731 Anotace The silicon nitride (SiN) films are typically used in semiconductor industry as a masking or dielectric layer. SiN films are used also as a base material for membrane fabrication that can be used for microelectronic and micro optic devices (MEMS, MOMS) to modify electromagnetic radiation or charged particle beams distribution, phase or spectrum. While the basic procedure of fabrication membranes is well described, the micro- and nanopatterning of its surface brings new challenges and functionality.
This paper presents a fabrication method of nano perforated SiN dielectric membrane in a silicon frame using ultra-high resolution electron-beam lithography (EBL) and reactive ion etching (RIE) technique. Silicon chips with freestanding membranes are obtained by standard silicon fabrication procedures. Preparation procedures for pattern transfer in the SiN layer through the metal and polymer etch mask are presented, involving advanced lithographic, deposition and etching techniques. Theoretical aspects are summarized including technological issues, achieved results and application potential of patterned silicon nitride membranes. The properties of experimentally fabricated charged particle optics device consisting of nano-patterned SiN membrane developed for electron vortex generation in a scanning transmission electron microscope (STEM) are described. Additional possibility of using these nanostructured membranes is also discussed.
Pracoviště Ústav přístrojové techniky Kontakt Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178 Rok sběru 2020
Počet záznamů: 1