Počet záznamů: 1  

Strategies for doped nanocrystalline silicon integration in silicon heterojunction solar cells

  1. 1.
    SYSNO ASEP0471531
    Druh ASEPJ - Článek v odborném periodiku
    Zařazení RIVJ - Článek v odborném periodiku
    Poddruh JČlánek ve WOS
    NázevStrategies for doped nanocrystalline silicon integration in silicon heterojunction solar cells
    Tvůrce(i) Seif, J. (CH)
    Descoeudres, A. (CH)
    Nogay, G. (CH)
    Hänni, S. (CH)
    de Nicolas, S.M. (CH)
    Holm, N. (CH)
    Geissbühler, J. (CH)
    Hessler-Wyser, A. (CH)
    Duchamp, M. (DE)
    Dunin-Borkowski, R.E. (DE)
    Ledinský, Martin (FZU-D) RID
    De Wolf, S. (CH)
    Ballif, C. (CH)
    Celkový počet autorů13
    Zdroj.dok.IEEE Journal of Photovoltaics - ISSN 2156-3381
    Roč. 6, č. 5 (2016), s. 1132-1140
    Poč.str.9 s.
    Jazyk dok.eng - angličtina
    Země vyd.US - Spojené státy americké
    Klíč. slovamicrocrystalline silicon ; nanocrystalline silicon ; silicon heterojunctions (SHJs) ; solar cells
    Vědní obor RIVBM - Fyzika pevných látek a magnetismus
    CEPLM2015087 GA MŠk - Ministerstvo školství, mládeže a tělovýchovy
    Institucionální podporaFZU-D - RVO:68378271
    UT WOS000388963600011
    EID SCOPUS84975298269
    DOI10.1109/JPHOTOV.2016.2571619
    AnotaceCarrier collection in silicon heterojunction (SHJ) solar cells is usually achieved by doped amorphous silicon layers of a few nanometers, deposited at opposite sides of the crystalline silicon wafer. These layers are often defect-rich, resulting in modest doping efficiencies, parasitic optical absorption when applied at the front of solar cells, and high contact resistivities with the adjacent transparent electrodes. Their substitution by equally thin doped nanocrystalline silicon layers has often been argued to resolve these drawbacks. However, low-temperature deposition of highly crystalline doped layers of such thickness on amorphous surfaces demands sophisticated deposition engineering. In this paper, we review and discuss different strategies to facilitate the nucleation of nanocrystalline silicon layers and assess their compatibility with SHJ solar cell fabrication. We also implement the obtained layers into devices, yielding solar cells with fill factor values of over 79% and efficiencies of over 21.1%, clearly underlining the promise this material holds for SHJ solar cell applications.
    PracovištěFyzikální ústav
    KontaktEva Pulcmanová, pulcman@fzu.cz, Tel.: 220 318 579
    Rok sběru2017