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Influence of non-adherent yeast cells on electrical characteristics of diamond-based field-effect transistors
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SYSNO ASEP 0470423 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Influence of non-adherent yeast cells on electrical characteristics of diamond-based field-effect transistors Tvůrce(i) Procházka, Václav (FZU-D) ORCID
Cifra, Michal (URE-Y) RID, ORCID, SAI
Kulha, Pavel (FZU-D)
Ižák, Tibor (FZU-D) RID
Rezek, Bohuslav (FZU-D) RID, ORCID
Kromka, Alexander (FZU-D) RID, ORCID, SAIZdroj.dok. Applied Surface Science. - : Elsevier - ISSN 0169-4332
Roč. 395, Feb (2017), s. 214-219Poč.str. 6 s. Jazyk dok. eng - angličtina Země vyd. NL - Nizozemsko Klíč. slova nanocrystalline diamond ; yeast cells ; field-effect transistor ; transfer characteristics pH sensitivity Vědní obor RIV BO - Biofyzika Obor OECD Biophysics CEP GBP108/12/G108 GA ČR - Grantová agentura ČR Institucionální podpora FZU-D - RVO:68378271 ; URE-Y - RVO:67985882 UT WOS 000390428300036 EID SCOPUS 84967155237 DOI 10.1016/j.apsusc.2016.05.003 Anotace Diamond thin films provide unique features as substrates for cell cultures and as bio-electronic sensors. Here we employ solution-gated field effect transistors (SGFET) based on nanocrystalline diamond thin films with H-terminated surface which exhibits the sub-surface p-type conductive channel. We study an influence of yeast cells (Saccharomyces cerevisiae) on electrical characteristics of the diamond SGFETs. Two different cell culture solutions (sucrose and yeast peptone dextrose–YPD) are used, with and without the cells. We have found that transfer characteristics of the SGFETs exhibit a negative shift of the gate voltage by −26 mV and −42 mV for sucrose and YPD with cells in comparison to blank solutions without the cells. This effect is attributed to a local pH change in close vicinity of the H-terminated diamond surface due to metabolic processes of the yeast cells.
Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2017
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