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MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm

SYSNO ASEP	0448593
Druh ASEP	J - Článek v odborném periodiku
Zařazení RIV	J - Článek v odborném periodiku
Poddruh J	Článek ve WOS
Název	MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm
Tvůrce(i)	Zíková, Markéta (FZU-D)_RID Hospodková, Alice (FZU-D)_{RID, ORCID, SAI} Pangrác, Jiří (FZU-D)_{RID, ORCID, SAI} Oswald, Jiří (FZU-D)_{RID, ORCID} Krčil, Pavel (FZU-D) Hulicius, Eduard (FZU-D)_{RID, ORCID, SAI} Komninou, Ph. (GR) Kioseoglou, J. (GR)
Zdroj.dok.	Journal of Crystal Growth. - : Elsevier - ISSN 0022-0248 Roč. 414, Mar (2015), 167-171
Poč.str.	5 s.
Jazyk dok.	eng - angličtina
Země vyd.	NL - Nizozemsko
Klíč. slova	long emission wavelength ; photocurrent ; InAs quantum dots ; MOVPE ; GaAsSb layer
Vědní obor RIV	BM - Fyzika pevných látek a magnetismus
CEP	GA13-15286S GA ČR - Grantová agentura ČR
	LM2011026 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy
Institucionální podpora	FZU-D - RVO:68378271
UT WOS	000349602900030
EID SCOPUS	84922565864
DOI	10.1016/j.jcrysgro.2014.09.053
Anotace	Preparation and properties of InAs/GaAs quantum dots prepared by the MOVPE covered by GaAsSb SRL with extremely long emission wavelength at 1.8 µm is presented. The prolongation of the emission wavelength was achieved by the introduction of GaAsSb SRL with Sb content of about 30% in the solid phase. The high Sb concentration in the SRL causes the preservation of QD size, it prolongs the PL wavelength. Furthermore, high content of antimony leads to a creation of type II heterostructure for which a red shift of the PL wavelength and decrease of the PL intensity is typical. Low PL intensity may complicate light emitting applications; however, fast separation of carriers in the type II structure is an advantage for detector or solar cell application, especially with the long working wavelength. With respect to the perspective application of this structure, the photocurrent measurement was chosen as the complementary characterization method.
Pracoviště	Fyzikální ústav
Kontakt	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Rok sběru	2016

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