Počet záznamů: 1
Low temperature delayed recombinationand trap tunneling
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SYSNO ASEP 0448026 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Low temperature delayed recombinationand trap tunneling Tvůrce(i) Mihóková, Eva (FZU-D) RID, ORCID, SAI
Schulman, L. S. (US)Zdroj.dok. Journal of Physics-Condensed Matter. - : Institute of Physics Publishing - ISSN 0953-8984
Roč. 27, č. 7 (2015), 1-8Poč.str. 8 s. Jazyk dok. eng - angličtina Země vyd. GB - Velká Británie Klíč. slova scintillator ; tunneling ; traps Vědní obor RIV BM - Fyzika pevných látek a magnetismus Institucionální podpora FZU-D - RVO:68378271 UT WOS 000349604100011 DOI 10.1088/0953-8984/27/7/075501 Anotace Delayed recombination of charge carriers at an activator is a significant problem for fast scintillators and is usually associated with thermal effects. However, experimental results have shown that this phenomenon can occur even at the lowest temperatures. We here provide evidence in support of the idea that this is due to quantum tunneling between activator and nearby traps, and provide analytic estimates relating the energy levels and locations of those traps to the observed delayed recombination. Several calculations are devoted to showing that deviations from the simplest estimates in fact do not occur. Moreover, these estimates are consistent with lower dimensional numerical calculations for a physically significant range of trap distances. In two examples involving the activator Pr, the formulas developed are used to give the locations of traps based on likely values of trap energy depth. Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2016
Počet záznamů: 1