Počet záznamů: 1  

Mn doped GaN thin films and nanoparticles

  1. 1.
    SYSNO ASEP0388009
    Druh ASEPJ - Článek v odborném periodiku
    Zařazení RIVJ - Článek v odborném periodiku
    Poddruh JČlánek ve WOS
    NázevMn doped GaN thin films and nanoparticles
    Tvůrce(i) Šofer, Z. (CZ)
    Sedmidubský, D. (CZ)
    Huber, Š. (CZ)
    Hejtmánek, Jiří (FZU-D) RID, ORCID
    Macková, Anna (UJF-V) RID, ORCID
    Fiala, R. (CZ)
    Zdroj.dok.International Journal of Nanotechnology - ISSN 1475-7435
    Roč. 9, 8-9 (2012), s. 809-824
    Poč.str.16 s.
    Jazyk dok.eng - angličtina
    Země vyd.GB - Velká Británie
    Klíč. slovaGaN nanoparticles ; GaN thin films ; manganese ; transition metals ; MOVPE ; ion implantations
    Vědní obor RIVBM - Fyzika pevných látek a magnetismus
    CEPGA104/09/0621 GA ČR - Grantová agentura ČR
    CEZAV0Z10100521 - FZU-D (2005-2011)
    AV0Z10480505 - UJF-V (2005-2011)
    UT WOS000303800500009
    DOI10.1504/IJNT.2012.046754
    AnotaceMagnetically doped GaN in the form of thin films and nanoparticles has been investigated. The Mn doped GaN layers were grown on sapphire substrates by MOVPE. The influence of deposition condition on surface morphology, magnetic and structural properties was investigated. GaN:Mn epitaxial layers exhibit magnetic moment persisting up to room temperature. The magnetically doped layers were also prepared by ion implantation of GaN layers by Mn. The influence of free carrier concentration and other parameters on magnetic properties were investigated. The pure and transition metal (Cr, Mn and Fe) doped GaN nanoparticles were synthesised by decomposition of fluoride-based complex compound in ammonia atmosphere. Mn doped nanoparticles exhibit pure paramagnetic behaviour.
    PracovištěFyzikální ústav
    KontaktKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Rok sběru2013
Počet záznamů: 1