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Mn doping of GaN layers grown by MOVPE

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    SYSNO ASEP0385913
    Druh ASEPJ - Článek v odborném periodiku
    Zařazení RIVJ - Článek v odborném periodiku
    Poddruh JČlánek ve WOS
    NázevMn doping of GaN layers grown by MOVPE
    Tvůrce(i) Šimek, P. (CZ)
    Šofer, Z. (CZ)
    Sedmidubský, D. (CZ)
    Jankovský, O. (CZ)
    Hejtmánek, Jiří (FZU-D) RID, ORCID
    Maryško, Miroslav (FZU-D) RID
    Václavů, M. (CZ)
    Mikulics, M. (DE)
    Zdroj.dok.Ceramics - Silikáty. - : VŠCHT Praha. - : Ústav struktury a mechaniky hornin AV ČR, v. v. i. - ISSN 0862-5468
    Roč. 56, č. 2 (2012), s. 122-126
    Poč.str.5 s.
    Jazyk dok.eng - angličtina
    Země vyd.CZ - Česká republika
    Klíč. slovametalorganic vapor phase epitaxy ; nitrides ; magnetic materials ; semiconducting III-V materials
    Vědní obor RIVBM - Fyzika pevných látek a magnetismus
    CEPGA104/09/0621 GA ČR - Grantová agentura ČR
    CEZAV0Z10100521 - FZU-D (2005-2011)
    UT WOS000307678000006
    EID SCOPUS84864464968
    AnotaceIn this contribution we present a growth of Ga1-xMnxN layers by MOVPE. Mn doped GaN layers were grown with and without undoped GaN templates on (0001) sapphire substrates in a quartz horizontal reactor. For the deposition of Ga1-xMnxN layers (MCp)(2)Mn was used as a Mn-precursor The flow of the Mn precursor was 0.2-3.2 mu mol.min(-1). The deposition of Ga1-xMnxN layers was carried out under the pressure of 200 mbar the temperature 1050 degrees C and the V/III ratio of 1360. For the growth of high quality GaN:Mn layers it was necessary to grow these layers on a minimally partially coalesced layer of pure GaN. The direct deposition of GaN:Mn layer on the low temperature GaN buffer layer led to a three-dimensional growth during the whole deposition process. Another investigated parameter was the influence of nitrogen on the layer's properties. A nearly constant ferromagnetic moment persisting up to room temperature was observed on the synthesized thin films.
    PracovištěFyzikální ústav
    KontaktKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Rok sběru2013
Počet záznamů: 1