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Mn doping of GaN layers grown by MOVPE
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SYSNO ASEP 0385913 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Mn doping of GaN layers grown by MOVPE Tvůrce(i) Šimek, P. (CZ)
Šofer, Z. (CZ)
Sedmidubský, D. (CZ)
Jankovský, O. (CZ)
Hejtmánek, Jiří (FZU-D) RID, ORCID
Maryško, Miroslav (FZU-D) RID
Václavů, M. (CZ)
Mikulics, M. (DE)Zdroj.dok. Ceramics - Silikáty. - : University of Chemistry and Technology Prague - ISSN 0862-5468
Roč. 56, č. 2 (2012), s. 122-126Poč.str. 5 s. Jazyk dok. eng - angličtina Země vyd. CZ - Česká republika Klíč. slova metalorganic vapor phase epitaxy ; nitrides ; magnetic materials ; semiconducting III-V materials Vědní obor RIV BM - Fyzika pevných látek a magnetismus CEP GA104/09/0621 GA ČR - Grantová agentura ČR CEZ AV0Z10100521 - FZU-D (2005-2011) UT WOS 000307678000006 EID SCOPUS 84864464968 Anotace In this contribution we present a growth of Ga1-xMnxN layers by MOVPE. Mn doped GaN layers were grown with and without undoped GaN templates on (0001) sapphire substrates in a quartz horizontal reactor. For the deposition of Ga1-xMnxN layers (MCp)(2)Mn was used as a Mn-precursor The flow of the Mn precursor was 0.2-3.2 mu mol.min(-1). The deposition of Ga1-xMnxN layers was carried out under the pressure of 200 mbar the temperature 1050 degrees C and the V/III ratio of 1360. For the growth of high quality GaN:Mn layers it was necessary to grow these layers on a minimally partially coalesced layer of pure GaN. The direct deposition of GaN:Mn layer on the low temperature GaN buffer layer led to a three-dimensional growth during the whole deposition process. Another investigated parameter was the influence of nitrogen on the layer's properties. A nearly constant ferromagnetic moment persisting up to room temperature was observed on the synthesized thin films. Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2013
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