Počet záznamů: 1
Scanning Electron Microscopy with Samples in an Electric Field
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SYSNO ASEP 0385193 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Scanning Electron Microscopy with Samples in an Electric Field Tvůrce(i) Frank, Luděk (UPT-D) RID, SAI, ORCID
Hovorka, Miloš (UPT-D)
Mikmeková, Šárka (UPT-D) RID, SAI, ORCID
Mikmeková, Eliška (UPT-D) RID
Müllerová, Ilona (UPT-D) RID, SAI, ORCID
Pokorná, Zuzana (UPT-D) RID, ORCID, SAICelkový počet autorů 6 Zdroj.dok. Materials. - : MDPI
Roč. 5, č. 12 (2012), s. 2731-2756Poč.str. 26 s. Jazyk dok. eng - angličtina Země vyd. CH - Švýcarsko Klíč. slova scanning electron microscopy ; slow electrons ; low energy SEM ; low energy STEM ; cathode lens Vědní obor RIV JA - Elektronika a optoelektronika, elektrotechnika CEP GAP108/11/2270 GA ČR - Grantová agentura ČR TE01020118 GA TA ČR - Technologická agentura ČR ED0017/01/01 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy Institucionální podpora UPT-D - RVO:68081731 UT WOS 000312608500016 EID SCOPUS 84876478039 DOI 10.3390/ma5122731 Anotace The high negative bias of a sample in a scanning electron microscope constitutes the “cathode lens” with a strong electric field just above the sample surface. This mode offers a convenient tool for controlling the landing energy of electrons down to units or even fractions of electronvolts with only slight readjustments of the column. Moreover, the field accelerates and collimates the signal electrons to earthed detectors above and below the sample, thereby assuring high collection efficiency and high amplification of the image signal. One important feature is the ability to acquire the complete emission of the backscattered electrons, including those emitted at high angles with respect to the surface normal. The cathode lens aberrations are proportional to the landing energy of electrons so the spot size becomes nearly constant throughout the full energy scale. At low energies and with their complete angular distribution acquired, the backscattered electron images offer enhanced information about crystalline and electronic structures thanks to contrast mechanisms that are otherwise unavailable. Examples from various areas of materials science are presented. Pracoviště Ústav přístrojové techniky Kontakt Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178 Rok sběru 2013
Počet záznamů: 1