Počet záznamů: 1

Self-assembled InAs/GaAs quantum dots covered by different strain reducing layers exhibiting strong photo- and electroluminescence in 1.3 and 1.55 μm bands

SYSNO ASEP	0367915
Druh ASEP	J - Článek v odborném periodiku
Zařazení RIV	J - Článek v odborném periodiku
Poddruh J	Článek ve WOS
Název	Self-assembled InAs/GaAs quantum dots covered by different strain reducing layers exhibiting strong photo- and electroluminescence in 1.3 and 1.55 μm bands
Tvůrce(i)	Hazdra, P. (CZ) Oswald, Jiří (FZU-D)_{RID, ORCID} Komarnitskyy, V. (CZ) Kuldová, Karla (FZU-D)_{RID, ORCID} Hospodková, Alice (FZU-D)_{RID, ORCID, SAI} Hulicius, Eduard (FZU-D)_{RID, ORCID, SAI} Pangrác, Jiří (FZU-D)_{RID, ORCID, SAI}
Zdroj.dok.	Journal of Nanoscience and Nanotechnology. - : American Scientific Publishers - ISSN 1533-4880 Roč. 11, č. 8 (2011), s. 6804-6809
Poč.str.	6 s.
Jazyk dok.	eng - angličtina
Země vyd.	US - Spojené státy americké
Klíč. slova	quantum dots ; MOVPE ; InAs ; GaAs ; photoluminescence ; electroluminescence
Vědní obor RIV	BM - Fyzika pevných látek a magnetismus
CEP	GAP102/10/1201 GA ČR - Grantová agentura ČR
	GA202/09/0676 GA ČR - Grantová agentura ČR
CEZ	AV0Z10100521 - FZU-D (2005-2011)
UT WOS	000295296400021
DOI	10.1166/jnn.2011.4223
Anotace	The effect of different InGaAs and GaAsSb strain reducing layers on PL and EL from self-assembled InAs/GaAs quantum dots grown by metal-organic vapour phase epitaxy was investigated. The aim was to shift their luminescence maximum towards optical communication wavelengths at 1.3 or 1.55 μm. Results show that covering by InGaAs strain reducing layer provides stronger shift of photoluminescence maximum (up to 1.55 μm) as compared to GaAsSb one with similar strain in the structure. This is caused by the increase of quantum dot size during InGaAs capping and reduction of quantum confinement of the electron wave function which spreads into the cap. Although strong electroluminescence at 1300 nm was achieved from quantum dots covered by both types of strain reducing layers, the aAsSb strain reducing layer is more suitable for long wavelength lectroluminescence due to higher electron confinement potential allowing suppression of thermal carrier escape from quantum dots.
Pracoviště	Fyzikální ústav
Kontakt	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Rok sběru	2012

Počet záznamů: 1