Počet záznamů: 1
Self-assembled InAs/GaAs quantum dots covered by different strain reducing layers exhibiting strong photo- and electroluminescence in 1.3 and 1.55 μm bands
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SYSNO ASEP 0367915 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Self-assembled InAs/GaAs quantum dots covered by different strain reducing layers exhibiting strong photo- and electroluminescence in 1.3 and 1.55 μm bands Tvůrce(i) Hazdra, P. (CZ)
Oswald, Jiří (FZU-D) RID, ORCID
Komarnitskyy, V. (CZ)
Kuldová, Karla (FZU-D) RID, ORCID
Hospodková, Alice (FZU-D) RID, ORCID, SAI
Hulicius, Eduard (FZU-D) RID, ORCID, SAI
Pangrác, Jiří (FZU-D) RID, ORCID, SAIZdroj.dok. Journal of Nanoscience and Nanotechnology. - : American Scientific Publishers - ISSN 1533-4880
Roč. 11, č. 8 (2011), s. 6804-6809Poč.str. 6 s. Jazyk dok. eng - angličtina Země vyd. US - Spojené státy americké Klíč. slova quantum dots ; MOVPE ; InAs ; GaAs ; photoluminescence ; electroluminescence Vědní obor RIV BM - Fyzika pevných látek a magnetismus CEP GAP102/10/1201 GA ČR - Grantová agentura ČR GA202/09/0676 GA ČR - Grantová agentura ČR CEZ AV0Z10100521 - FZU-D (2005-2011) UT WOS 000295296400021 DOI 10.1166/jnn.2011.4223 Anotace The effect of different InGaAs and GaAsSb strain reducing layers on PL and EL from self-assembled InAs/GaAs quantum dots grown by metal-organic vapour phase epitaxy was investigated. The aim was to shift their luminescence maximum towards optical communication wavelengths at 1.3 or 1.55 μm. Results show that covering by InGaAs strain reducing layer provides stronger shift of photoluminescence maximum (up to 1.55 μm) as compared to GaAsSb one with similar strain in the structure. This is caused by the increase of quantum dot size during InGaAs capping and reduction of quantum confinement of the electron wave function which spreads into the cap. Although strong electroluminescence at 1300 nm was achieved from quantum dots covered by both types of strain reducing layers, the aAsSb strain reducing layer is more suitable for long wavelength lectroluminescence due to higher electron confinement potential allowing suppression of thermal carrier escape from quantum dots. Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2012
Počet záznamů: 1