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Surface refinement and electronic properties of graphene layers grown on copper substrate: An XPS, UPS and EELS study
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SYSNO ASEP 0362878 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Surface refinement and electronic properties of graphene layers grown on copper substrate: An XPS, UPS and EELS study Tvůrce(i) Siokou, A. (GR)
Ravani, F. (GR)
Karakalos, S. (GR)
Frank, Otakar (UFCH-W) RID, ORCID
Kalbáč, Martin (UFCH-W) RID, ORCID
Galiotis, C. (GR)Zdroj.dok. Applied Surface Science. - : Elsevier - ISSN 0169-4332
Roč. 257, č. 23 (2011), s. 9785-9790Poč.str. 6 s. Jazyk dok. eng - angličtina Země vyd. NL - Nizozemsko Klíč. slova graphene ; XPS ; EELS Vědní obor RIV CG - Elektrochemie CEP LC510 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy IAA400400911 GA AV ČR - Akademie věd CEZ AV0Z40400503 - UFCH-W (2005-2011) UT WOS 000293883400016 DOI 10.1016/j.apsusc.2011.06.017 Anotace The present work focuses on the assessment of two surface treatment procedures employed under ultra high vacuum conditions in order to obtain atomically clean graphene layers without disrupting the morphology and the two dimensional character of the films. Graphene layers grown by chemical vapor deposition on polycrystalline Cu were stepwise annealed up to 750 °C or treated by mild Ar+ sputtering. The effectiveness of both methods and the changes that they induce on the surface morphology and electronic structure of the films were systematically studied by X-ray photoelectron spectroscopy, and electron energy loss spectroscopy. Ultraviolet photoelectron spectroscopy was employed for the study of the electronic properties of the as received sample and in combination with the work function measurements, indicated the hybridization of the C–π network with Cu d-orbitals. Mild Ar+ sputtering sessions were found to disrupt the sp2 network and cause amorphisation of the graphitic carbon. Pracoviště Ústav fyzikální chemie J.Heyrovského Kontakt Michaela Knapová, michaela.knapova@jh-inst.cas.cz, Tel.: 266 053 196 Rok sběru 2012
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