Počet záznamů: 1
In-situ monitoring of the growth of nanostructured aluminum thin film
- 1.
SYSNO ASEP 0361263 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název In-situ monitoring of the growth of nanostructured aluminum thin film Tvůrce(i) Novotný, Michal (FZU-D) RID, ORCID, SAI
Bulíř, Jiří (FZU-D) RID, ORCID, SAI
Lančok, Ján (FZU-D) RID, ORCID
Pokorný, Petr (FZU-D) RID, ORCID, SAI
Bodnár, Michal (FZU-D)Zdroj.dok. Journal of Nanophotonics. - : SPIE - International Society for Optical Engineering - ISSN 1934-2608
Roč. 5, č. 5 (2011), "051503-1"-"051503-10"Poč.str. 10 s. Jazyk dok. eng - angličtina Země vyd. US - Spojené státy americké Klíč. slova aluminum ultrathin film ; magnetron sputtering ; in-situ monitoring ; electrical conductivity ; spectral ellipsometry ; optical emission spectroscopy Vědní obor RIV BM - Fyzika pevných látek a magnetismus CEP IAA100100718 GA AV ČR - Akademie věd IAA100100729 GA AV ČR - Akademie věd GP202/09/P324 GA ČR - Grantová agentura ČR CEZ AV0Z10100522 - FZU-D (2005-2011) UT WOS 000289550100001 DOI 10.1117/1.3543816 Anotace In order to control the nanostructure of aluminum thin films fabricated by RF magnetron sputtering, we made use of in-situ monitoring of electrical and optical properties of the growing layer as well as plasma characterization by mass and optical emission spectroscopy. The electrical conductivity and I-V characteristics were measured. The optical constants were obtained from optical monitoring based on spectral ellipsometry. The relevant models (based on one or two Lorentz oscillators and B-spline functions) were suggested to evaluate the data obtained from themonitoring techniques. The results of the in-situ monitoring were correlated with scanning electron microscope analyses. The nanostructure was effectively manipulated by RF power variation. Optical functions exhibiting plasmonic behavior in the UV range and a strong nonlinear character of I-V curves were obtained for an ultrathin Al film deposited at a lower growth rate. Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2013
Počet záznamů: 1