Počet záznamů: 1
Defects in Individual Semiconducting Single Wall Carbon Nanotubes: Raman Spectroscopic and in Situ Raman Spectroelectrochemical Study
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SYSNO ASEP 0353060 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Defects in Individual Semiconducting Single Wall Carbon Nanotubes: Raman Spectroscopic and in Situ Raman Spectroelectrochemical Study Tvůrce(i) Kalbáč, Martin (UFCH-W) RID, ORCID
Hsieh, Y. P. (US)
Farhat, H. (US)
Kavan, Ladislav (UFCH-W) RID, ORCID
Hofmann, M. (US)
Kong, J. (US)
Dresselhaus, M. S. (US)Zdroj.dok. Nano Letters. - : American Chemical Society - ISSN 1530-6984
Roč. 10, č. 11 (2010), s. 4619-4626Poč.str. 8 s. Jazyk dok. eng - angličtina Země vyd. US - Spojené státy americké Klíč. slova single wall carbon nanotubes ; Raman spectroscopy ; defects Vědní obor RIV CG - Elektrochemie CEP GC203/07/J067 GA ČR - Grantová agentura ČR IAA400400804 GA AV ČR - Akademie věd IAA400400911 GA AV ČR - Akademie věd KAN200100801 GA AV ČR - Akademie věd ME09060 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy CEZ AV0Z40400503 - UFCH-W (2005-2011) UT WOS 000283907600055 DOI 10.1021/nl102727f Anotace Raman spectroscopy and in situ Raman spectroelectrochemistry have been used to study the influence of defects on the Raman spectra of semiconducting individual single-walled carbon nanotubes (SWCNTs). The defects were created intentionally on part of an originally defect-free individual semiconducting nanotube, which allowed us to analyze how defects influence this particular nanotube. The formation of defects was followed by Raman spectroscopy that showed D band intensity coming from the defective part and no D band intensity coming from the original part of the same nanotube. It. is shown that the presence of defects also reduces the intensity of the symmetry-allowed Raman features. Furthermore, the changes to the Raman resonance window upon the introduction of defects are analyzed. It is demonstrated that defects lead to both a broadening of the Raman resonance profile and a decrease in the maximum intensity of the resonance profile. Pracoviště Ústav fyzikální chemie J.Heyrovského Kontakt Michaela Knapová, michaela.knapova@jh-inst.cas.cz, Tel.: 266 053 196 Rok sběru 2011
Počet záznamů: 1