Počet záznamů: 1
X-ray diffraction analysis of multilayer porous InP(001) structure
- 1.
SYSNO ASEP 0351779 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název X-ray diffraction analysis of multilayer porous InP(001) structure Tvůrce(i) Lomov, A. A. (RU)
Punegov, V. I. (RU)
Vasil'ev, A. L. (RU)
Nohavica, Dušan (URE-Y)
Gladkov, Petar (URE-Y)
Kartsev, A. A. (DE)
Novikov, D. V. (DE)Celkový počet autorů 7 Zdroj.dok. Crystallography Reports. - : Pleiades Publishing - ISSN 1063-7745
Roč. 55, č. 2 (2010), s. 182-190Poč.str. 9 s. Jazyk dok. eng - angličtina Země vyd. RU - Rusko Klíč. slova silicon layers ; INP Vědní obor RIV JA - Elektronika a optoelektronika, elektrotechnika CEZ AV0Z20670512 - URE-Y (2005-2011) UT WOS 000276507600003 DOI 10.1134/S1063774510020033 Anotace The porous structures were formed by anodic oxidation of InP(001) substrates in aqueous HCl solution. The structural parameters of the sublayers were varied by changing the electrochemical etching mode (potentiostatic/galvanostatic). The X-ray scattering intensity maps near the InP 004 reflection are obtained. A model for scattering from such systems is proposed based on the statistical dynamical diffraction theory. Theoretical scattering maps have been fitted to the experimental ones. It is shown that a mathematical analysis of the scattering intensity maps makes it possible to determine the structural parameters of sublayers. The reconstructed parameters (thickness, strain, and porosity of sublayers and the shape and arrangement of pores) are in satisfactory agreement with the scanning electron microscopy data. Pracoviště Ústav fotoniky a elektroniky Kontakt Petr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488 Rok sběru 2011
Počet záznamů: 1