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On angle resolved RF magnetron sputtering of Ge-Sb-Te thin films
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SYSNO ASEP 0341419 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název On angle resolved RF magnetron sputtering of Ge-Sb-Te thin films Tvůrce(i) Gutwirth, J. (CZ)
Wágner, T. (CZ)
Bezdička, Petr (UACH-T) SAI, RID, ORCID
Hrdlička, M. (CZ)
Vlček, Milan (UMCH-V) RID, ORCID
Frumar, M. (CZ)Zdroj.dok. Journal of Non-Crystalline Solids. - : Elsevier - ISSN 0022-3093
Roč. 355, 37-42 (2009), s. 1935-1938Poč.str. 4 s. Jazyk dok. eng - angličtina Země vyd. NL - Nizozemsko Klíč. slova amorphous semiconductors ; films and coatings ; sputtering Vědní obor RIV CA - Anorganická chemie CEP LC523 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy GA203/06/1368 GA ČR - Grantová agentura ČR CEZ AV0Z40320502 - UACH-T (2005-2011) AV0Z40500505 - UMCH-V (2005-2011) UT WOS 000270620900037 DOI 10.1016/j.jnoncrysol.2009.04.060 Anotace Thin amorphous films of Ge-Sb-Te were deposited from Ge2Sb2Te5 target by RF (f=13.56 MHz) magnetron sputtering in argon plasma. Composition and chemical homogeneity of target and prepared thin films were traced by Energy Dispersive X-ray Analysis coupled with Scanning Electron Microscope (SEM-EDX). SEM technique was also used for surface morphology observation. Crystallinity of target and prepared thin films was studied by X-ray Diffraction (XRD). Optical parameters of prepared thin films (spectral dependence of refractive index, optical band gap energy E-g(opt)) and film thicknesses were established via Variable Angle Spectroscopic Ellipsometry (VASE) supported by UV-Vis-NIR spectroscopy. Influence of deposition conditions (RF power, At pressure, angle divergency from normal direction) to composition, crystallinity, optical properties and deposition rate was established. Pracoviště Ústav anorganické chemie Kontakt Jana Kroneislová, krone@iic.cas.cz, Tel.: 311 236 931 Rok sběru 2010
Počet záznamů: 1