Počet záznamů: 1

Deposition of Germanium Nanowires from Digermane Precursor: Influence of the Substrate Pretreatment

SYSNO ASEP	0330687
Druh ASEP	J - Článek v odborném periodiku
Zařazení RIV	J - Článek v odborném periodiku
Poddruh J	Ostatní články
Název	Deposition of Germanium Nanowires from Digermane Precursor: Influence of the Substrate Pretreatment
Překlad názvu	Depozice germaniových nanodrátů z digermánu: Vliv úpravy substrátu
Tvůrce(i)	Dřínek, Vladislav (UCHP-M)_{RID, ORCID, SAI} Fajgar, Radek (UCHP-M)_{RID, ORCID, SAI} Klementová, Mariana (UACH-T)_{RID, SAI, ORCID} Šubrt, Jan (UACH-T)_{SAI, RID}
Zdroj.dok.	ECS Transactions. - : Institute of Physics Publishing - ISSN 1938-5862 Roč. 25, č. 8 (2009), s. 1015-1022
Poč.str.	8 s.
Jazyk dok.	eng - angličtina
Země vyd.	US - Spojené státy americké
Klíč. slova	microelectronic circuits ; nanoscale technology
Vědní obor RIV	CH - Jaderná a kvantová chemie, fotochemie
CEP	GA203/09/1088 GA ČR - Grantová agentura ČR
CEZ	AV0Z40720504 - UCHP-M (2005-2011)
	AV0Z40320502 - UACH-T (2005-2011)
Anotace	Germanium Nanowires (GeNWs) were synthesized by Low Pressure Chemical Vapor Deposition (LPCVD) of hexamethyldigermane (GeMe3)2 at temperature of 490 {degree sign}C and pressure of 90-100 Pa. GeNWs of several nanometers in diameter and a few microns in length were deposited onto various substrates - stainless steel, Fe, Mo, Ta, W, Si, and SiO2. Influence of surface pretreatment of the substrates (roughening of surface or Ge sputtering) is discussed in respect to the previously published theory of GeNW growth through the intermetallic alloy mechanism. The results conclude that another mechanism should be taken into account - the non-catalyst mechanism. Ge seeds necessary for triggering GeNW growth are formed by aggregation of Ge atoms/atom clusters/fragments which are stuck onto the substrate surface at the beginning of the process. The non-catalyst growth of GeNW triggered by such mechanism can be applied in growing GeNWs on semiconductors and insulators.
Pracoviště	Ústav chemických procesů
Kontakt	Eva Jirsová, jirsova@icpf.cas.cz, Tel.: 220 390 227
Rok sběru	2010

Počet záznamů: 1