Počet záznamů: 1
Charge-coupled device area detector for low energy electrons
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SYSNO ASEP 0205623 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Ostatní články Název Charge-coupled device area detector for low energy electrons Tvůrce(i) Horáček, Miroslav (UPT-D) RID, ORCID, SAI Zdroj.dok. Review of Scientific Instruments. - : AIP Publishing - ISSN 0034-6748
Roč. 74, č. 7 (2003), s. 3379 - 3384Poč.str. 6 s. Jazyk dok. eng - angličtina Země vyd. US - Spojené státy americké Klíč. slova low energy electrons ; charged-coupled device ; detector Vědní obor RIV JA - Elektronika a optoelektronika, elektrotechnika CEP GA102/00/P001 GA ČR - Grantová agentura ČR CEZ AV0Z2065902 - UPT-D Anotace A fast position-sensitive detector was designed for the angle- and energy-selective detection of signal electrons in the scanning low energy electron microscope (SLEEM), based on a thinned back-side directly electron-bombarded charged-coupled device (CCD) sensor (EBCCD). The principle of the SLEEM operation and the motivation for the development of the detector are explained. The electronics of the detector is described as well as the methods used for the measurement of the electron-bombarded gain and of the dark signal. The EBCCD gain of 565 for electron energy 5 keV and dynamic range 59 dB for short integration time up to 10 ms at room temperature were obtained. The energy dependence of EBCCD gain and the detection efficiency are presented for electron energy between 2 and 5 keV, and the integration time dependence of the output signals under dark conditions is given for integration time from 1 to 500 ms. Pracoviště Ústav přístrojové techniky Kontakt Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178 Rok sběru 2004
Počet záznamů: 1