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Quantitative depth profiling of K-doped fullerene films using XPS and SIMS
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SYSNO ASEP 0031295 Druh ASEP J - Článek v odborném periodiku Zařazení RIV Záznam nebyl označen do RIV Poddruh J Ostatní články Název Quantitative depth profiling of K-doped fullerene films using XPS and SIMS Tvůrce(i) Oswald, S. (DE)
Janda, Pavel (UFCH-W) RID, ORCID
Dunsch, L. (DE)Zdroj.dok. Microchimica Acta. - : Springer - ISSN 0026-3672
Roč. 141, 1-2 (2003), s. 79-85Poč.str. 7 s. Jazyk dok. eng - angličtina Země vyd. AT - Rakousko Klíč. slova XPS ; SIMS ; depth profiling ; fullerenes ; doping Vědní obor RIV CG - Elektrochemie CEZ AV0Z4040901 - UFCH-W Anotace Phenomena accompanying electrochemical doping of solid fullerene films with potassium were studied by sputter ion depth profiling (XPS and SIMS). The potassium distribution was determined, and artifacts associated with possible damage of the layer composition caused by ion impact were investigated and discussed. To compare the charge transfer while reductive doping is taking place at fullerene/solution interface with doping from gas phase, model layers were prepared and doped by potassium under UHV conditions. It was found that sputtering by Ar+ primary ions yields both accurate information on the alkaline metal distribution and on its concentration. Sputtering by O+ ions led to an enrichment of potassium, apparently due to the reactivity of oxygen with the fullerene matrix. It is shown that the reductive doping starts at the fullerene/solution interface. The concentration of potassium in the doped films was found to be lower than expected from the charge transferred during the electrochemical reduction. Other phase transformations such as hydrogenation are discussed. Pracoviště Ústav fyzikální chemie J.Heyrovského Kontakt Michaela Knapová, michaela.knapova@jh-inst.cas.cz, Tel.: 266 053 196 Rok sběru 2006
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